U.S. Government Selects Navitas to Develop Next-Generation 10 kV SiC Power Semiconductors

Award recognizes Navitas’ leadership in ultra-high-voltage (UHV) SiC technology and resilient U.S.-anchored manufacturing supply chainTORRANCE, Calif., Sept. 28, 2026 (GLOBE NEWSWIRE) — Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced it has been awarded the ALATTIS (Accelerated, Large-Area, 10 kV SiC IGBT) program to develop next-generation 10 kV silicon carbide (